Our collaboration paper with MIT and OSU is highlighted in MIT News and other media outlets.

https://news.mit.edu/2024/turning-up-heat-on-next-generation-semiconductors-0523

 

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Appl. Phys. Lett. 124, 202103 (2024)

https://doi.org/10.1063/5.0191297

The scorching surface of Venus, where temperatures can climb to 480 degrees Celsius (hot enough to melt lead), is an inhospitable place for humans and machines alike. One reason scientists have not yet been able to send a rover to the planet’s surface is because silicon-based electronics can’t operate in such extreme temperatures for an extended period of time.

For high-temperature applications like Venus exploration, researchers have recently turned to gallium nitride, a unique material that can withstand temperatures of 500 degrees or more.

The material is already used in some terrestrial electronics, like phone chargers and cell phone towers, but scientists don’t have a good grasp of how gallium nitride devices would behave at temperatures beyond 300 degrees, which is the operational limit of conventional silicon electronics.

In a new paper published in Applied Physics Letters, which is part of a multiyear research effort, a team of scientists from MIT and elsewhere sought to answer key questions about the material’s properties and performance at extremely high temperatures.