The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the…
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Optical sources emitting in the ultraviolet (UV) to near-infrared wavelength range are an enabling tools for a wide variety of applications. To achieve broadband coherent generation within visible and UV spectrum, one fundamental obstacle is the strong material dispersion which limits efficient frequency conversion. Previous works have addressed this challenge by either using high input…
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The Department of Electrical and Computer and Engineering at Rice University is excited to announce that Prof. Yuji Zhao will be joining the department as an Associate Professor on July 1st, 2021. Prof. Yuji Zhao, joins ECE from Arizona State University, where he led a group focused on semiconductor materials and devices. His research group…
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AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from…
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